NOVEL METHOD FOR ELECTROMIGRATION AND ADHESION USING TWO SELECTIVE DEPOSITION

摘要

A method of manufacturing a semiconductor device includes providing a semiconductor substrate, sequentially forming an etch stop layer and an interlayer dielectric layer on the semiconductor substrate, forming a copper metal interconnect structure in the interlayer dielectric layer, forming a copper layer in the copper metal interconnect structure, forming a cobalt layer on the copper layer, and forming an aluminum nitride layer on the cobalt layer. The stack of cobalt layer and copper layer effectively suppresses electromigration caused by diffusion of the copper layer into the interlayer dielectric layer, improves the adhesion between the copper layer and the etch stop layer, and prevents delamination.

主权项

1. A method of manufacturing a semiconductor device, comprising:
providing a semiconductor substrate; sequentially forming an etch stop layer and an interlayer dielectric layer on the semiconductor substrate; forming a copper interconnect structure in the interlayer dielectric layer; forming a copper layer in the copper interconnect structure; forming a cobalt layer on the copper layer; and forming an aluminum nitride (AlN) layer on the cobalt metal layer.