LATERAL BIPOLAR TRANSISTOR AND ITS MANUFACTURING METHOD

摘要

The disclosed lateral bipolar transistor is manufactured by a manufacturing process of self-alignedly implanting an impurity to a gate electrode and thermally diffusing the impurity to form a base layer and an emitter layer. The gate electrode is utilized as an independent fourth terminal in addition to base, emitter, and collector terminals, whereby hfe can be controlled and enhanced by a gate potential. Accordingly, the present invention can provide a bipolar transistor that is hardly affected by a manufacturing variation, or that can be corrected by the gate terminal, and that has a high gain.

主权项

1. A lateral bipolar transistor comprising:
a semiconductor substrate; a gate oxide film and a gate electrode, which are formed on a surface of the semiconductor substrate; a collector region formed apart from the gate electrode with a distance, and having a feed region of a first conductive type; an emitter region formed in the vicinity of the gate oxide film in a horizontal direction at a side opposite to the collector region across the gate electrode, and having a feed region of a first conductive type; and a base region of a second conductive type formed below the gate oxide film and having a feed region that is located close to the emitter feed region, wherein the emitter region, the base region, and the collector region are formed in the horizontal direction.