METHOD AND DEVICE FOR DETERMINING THE TEMPERATURE CALIBRATION CHARACTERISTIC CURVE OF A SEMICONDUCTOR COMPONENT APPERTAINING TO POWER ELECTRONICS

摘要

The invention relates to methods and devices for determining the temperature calibration characteristic curve of a semiconductor component (3) appertaining to power electronics. They are distinguished, in particular, by the fact that the temperature calibration characteristic curve can be determined in a simple and economically advantageous manner. For this purpose, the power connections of the semiconductor component (3) are interconnected—with a first current source (1) for a load current,—with a second current source (2) for a measurement Current—with a voltmeter (v) for measuring the voltage dropped across either the power connections or auxiliary connections connected to the power connections. Furthermore, the semiconductor component (3) connected to a data processing system is—heated by means of the power loss thereof at intervals with the first current source (1) switched on and—the voltage dropped across the power or auxiliary connections with the first current source (1) switched off and the second current source (2) switched on is measured between the intervals after a time duration determined by the thermal main time constant of the semiconductor component (3) as values representing the temperature including the associated temperatures. Following an approximation the values form the calibration characteristic curve of the semiconductor component (3).

主权项

1. A method for determining the temperature calibration characteristic curve of a power semiconductor component appertaining to power electronics, characterized in that the power connections of the semiconductor component (3) are interconnected
with a first current source (1) for a load current (Iload), with a second current source (2) for a measurement current (Imeas), with a voltmeter (V) for measuring the voltage (UCE) falling either via the power connections or via the auxiliary connections linked to the power connections,wherein the semiconductor component linked to a data processing system (3)
is heated up at intervals via its power loss with the first current source (1) connected, the voltage (UCE) falling between the intervals either via the power connections or via the auxiliary connections is measured with the first current source (1) switched off and the second current source (2) connected after a period of time determined by the thermal main time constant of the semiconductor component (3) as values representing the temperature, at the same time the temperature is detected by means of at least one temperature sensor coupled to the semiconductor component (3) and connected together with the data processing system and the respective temperature is assigned to the voltage value, so that the voltage values and the temperatures, after an approximation, form the calibration characteristic curve of the semiconductor component (3),