Pattern formation method

摘要

A resist film is formed from a chemically amplified resist material including a base polymer having a lactone group and having neither a hydroxyl group nor a carboxylic group as an adhesion group bonded to a polymer side chain; and an acid generator for generating an acid through irradiation with light. The resist film is irradiated with extreme UV of a wavelength of a 1 nm through 30 nm band for pattern exposure. The resist film is developed after the pattern exposure, so as to form a resist pattern from an unexposed portion of the resist film.