| 摘要 |
PROBLEM TO BE SOLVED: To provide a tablet for vapor deposition capable of stable deposition by an ion plating method.SOLUTION: A tablet for vapor deposition containing In and Si, in which the Si content is 0.65 or more and 1.75 or less in terms of the Si/In atomic ratio, the ratio of an indium silicate compound crystal having a thortveitite-type structure is 30 mass% or less, the specific resistance value is 100 &OHgr; cm or less, and a relative density is 40% or higher and 80% or lower, is obtained by using SiOpowder as a Si raw material, and by sintering it at a sintering temperature of 1,100°C or higher and 1,350°C or lower by a normal pressure sintering method. |
