| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To manufacture a high-quality, large TGG crystal inexpensively and easily. <P>SOLUTION: The TGG crystal is grown on a substrate composed of a GGG crystal or SGGG crystal by LPE method. The TGG crystal is represented by a composition: Tb<SB POS="POST">3</SB>M<SB POS="POST">x</SB>Ga<SB POS="POST">5-x</SB>O<SB POS="POST">12</SB>, wherein M is at least one trivalent element selected from Sc and In; in the case of the substrate being GGG, 0.1≤x≤0.5, and in the case of the substrate being SGGG, 0.9≤x≤1.65; and the difference in vertical lattice constant between the substrate and the grown TGG crystal is made±0.02Å. A TGG crystal is LPE grown at 850 to 980°C by bringing one surface of a substrate into contact with the surface of a melt containing necessary garnet raw materials and a flux of PbO and B<SB POS="POST">2</SB>O<SB POS="POST">3</SB>. In the melt, one or more oxides selected from SiO<SB POS="POST">2</SB>, GeO<SB POS="POST">2</SB>and TiO<SB POS="POST">2</SB>, or CeO<SB POS="POST">2</SB>may be contained. As required, the grown TGG crystal is subjected to a reduction treatment. <P>COPYRIGHT: (C)2013,JPO&INPIT</p> |
