Regrouping and Skipping Cycles in Non-Volatile Memory

摘要

A non-volatile memory system utilizes multiple programming cycles to write units of data, such as a logical page of data, to a non-volatile memory array. User data is evaluated before writing to determine whether programming can be skipped for bay addresses. The system determines whether programming can be skipped for an initial set of bay groups. If a bay group cannot be skipped, the system determines whether the bay group includes individual bays that may be skipped. Bays are regrouped into new bay groups to reduce the number of BAD cycles during programming. Independent column addressing for multiple bays within a bay group is provided. During a column address cycle, a separate column address is provided to the bays to select different columns for programming within each bay. By simultaneously programming multiple column addresses during a single column address cycle, the system may skip programming for some column address cycles.

主权项

1. A method of programming non-volatile storage, comprising:
providing a first column address to a first bay of non-volatile storage elements, wherein the first column address is associated with a first column that includes non-volatile storage elements in the first bay and a second bay of non-volatile storage elements; while providing the first column address to the first bay, providing a second column address to the second bay of non-volatile storage elements, wherein the second column address is associated with a second column that includes non-volatile storage elements in the first bay and the second bay; and in response to the first column address and the second column address, simultaneously programming in a first column address cycle a first portion of the first column of non-volatile storage elements in the first bay and a second portion of the second column of non-volatile storage elements in the second bay.