发明名称 |
HIGH PERFORMANCE TRANSPARENT ELECTRODE-EMBEDDING DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
The present invention relates to a high performance transparent electrode device and the fabricating method thereof wherein the method includes the steps of: providing a semiconductor substrate; depositing a transparent electrode material on the semiconductor substrate at room temperature and forming the transparent electrode; and heat-treating the transparent electrode. |
申请公布号 |
KR101517077(B1) |
申请公布日期 |
2015.05.04 |
申请号 |
KR20140062288 |
申请日期 |
2014.05.23 |
申请人 |
INCHEON UNIVERSITY INDUSTRY ACADEMIC COOPERATION FOUNDATION |
发明人 |
KIM, JOON DONG;YUN, JU HYUNG;KIM, HYUN YUB;KIM, HYUN KI |
分类号 |
H01L31/0224;H01L31/04;H01L31/18 |
主分类号 |
H01L31/0224 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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