| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a normally-off type nitride semiconductor device capable of being formed only by a manufacturing method with excellent controllability and capable of operating with a high frequency. <P>SOLUTION: On an electron supply layer 4 between a source electrode 5 and a drain electrode 6, a floating electrode 8 that Schottky-contacts with the electron supply layer 4 is disposed, and a gate electrode 7 is disposed on the floating electrode 8 via an insulating film. Additionally, a surface of the electron supply layer between the source electrode 5 and the drain electrode 6 is coated by a silicon film 11. A positive bias is applied to the gate electrode 7, and electrons are accumulated in the floating electrode 8. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
