PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, ELECTRONIC DEVICE, BLOCK COPOLYMER AND BLOCK COPOLYMER MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a pattern formation method which can achieve a further fine pitch design of a pattern in self-organizing lithography using a graphoepitaxy method; and provide a block copolymer used for the pattern formation method and a manufacturing method of the block copolymer.SOLUTION: A pattern formation method comprises the steps of: exposing an actinic ray-sensitive film and forming a block copolymer layer containing a first block copolymer or a second block copolymer on a substrate 10 on which guide patterns are formed by developing; heating the block copolymer layer and phase separating the block copolymer layer to form a lamella structure in which removal phases 32 and non-removal phases 33 are alternately arranged along the guide patterns 21, 21; and selectively removing the removal phases 32 and leaving the non-removal phases 33 thereby to form a further fine pitch design pattern.