| 发明名称 |
ELECTROSTATIC DISCHARGE PROTECTION DEVICE |
| 摘要 |
The invention provides an electrostatic discharge (ESD) protection device. The ESD protection device includes a semiconductor substrate having an active region, a first well region having a first conductive type formed in the active region, a first doped region having the first conductive type formed in the first well region, a first metal contact disposed on the first doped region, and a second metal contact disposed on the active region, connecting to the first well region, wherein no doped region is formed between the second metal contact and the first well region. |
| 申请公布号 |
US2015171072(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201514630733 |
申请日期 |
2015.02.25 |
| 申请人 |
MediaTek Inc. |
发明人 |
ZENG Zheng;KO Ching-Chung;HUANG Bo-Shih |
| 分类号 |
H01L27/02;H01L29/47;H01L29/872 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An electrostatic discharge (ESD) protection device, comprising:
a semiconductor substrate having an active region; a first well region having a first conductive type formed in the active region; a first doped region having the first conductive type formed in the first well region; a first metal contact disposed on the first doped region; and a second metal contact disposed on the active region, connecting to the first well region, wherein no doped region is formed between the second metal contact and the first well region. |
| 地址 |
Hsin-Chu TW |
