发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS
摘要 According to one embodiment, a plurality of semiconductor devices is mounted on a wiring substrate. A surface, on which a semiconductor devices of the wiring substrate are mounted, and the plurality of semiconductor devices are sealed by using a sealing resin. The wiring substrate which is sealed is cut and thus separated into semiconductor apparatuses. The semiconductor apparatuses after the separation are heated. A shield layer is formed by metal sputtering over wiring exposed at the edge of the cut wiring substrate and the sealing resin of the semiconductor apparatus, after the heating.
申请公布号 US2015170988(A1) 申请公布日期 2015.06.18
申请号 US201414474670 申请日期 2014.09.02
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 WATANABE Takeshi;IMOTO Takashi;TAKANO Yuusuke;HOMMA Soichi;SHIBUYA Katsunori
分类号 H01L23/31;H01L21/56;H01L23/552 主分类号 H01L23/31
代理机构 代理人
主权项 1. A method of manufacturing a semiconductor apparatus, the method comprising: sealing a surface of a wiring substrate on which a plurality of semiconductor devices are mounted, and the plurality of semiconductor devices mounted thereon, with a sealing resin; cutting the sealed wiring substrate into individual semiconductor apparatuses, wherein the edges of the portion of the wiring substrate thereof include exposed wire at the cut edge; heating the semiconductor apparatuses after the separation thereof; and covering the exposed edge of the wiring substrate and the sealing resin with a sputtered metal layer after the heating thereof.
地址 Tokyo JP