发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS |
摘要 |
According to one embodiment, a plurality of semiconductor devices is mounted on a wiring substrate. A surface, on which a semiconductor devices of the wiring substrate are mounted, and the plurality of semiconductor devices are sealed by using a sealing resin. The wiring substrate which is sealed is cut and thus separated into semiconductor apparatuses. The semiconductor apparatuses after the separation are heated. A shield layer is formed by metal sputtering over wiring exposed at the edge of the cut wiring substrate and the sealing resin of the semiconductor apparatus, after the heating. |
申请公布号 |
US2015170988(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201414474670 |
申请日期 |
2014.09.02 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
WATANABE Takeshi;IMOTO Takashi;TAKANO Yuusuke;HOMMA Soichi;SHIBUYA Katsunori |
分类号 |
H01L23/31;H01L21/56;H01L23/552 |
主分类号 |
H01L23/31 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor apparatus, the method comprising:
sealing a surface of a wiring substrate on which a plurality of semiconductor devices are mounted, and the plurality of semiconductor devices mounted thereon, with a sealing resin; cutting the sealed wiring substrate into individual semiconductor apparatuses, wherein the edges of the portion of the wiring substrate thereof include exposed wire at the cut edge; heating the semiconductor apparatuses after the separation thereof; and covering the exposed edge of the wiring substrate and the sealing resin with a sputtered metal layer after the heating thereof. |
地址 |
Tokyo JP |