HIGHLY EFFICIENT SILICON NANOCRYSTAL PHOTODETECTOR BY USING A MULTIPLE REFLECTION LAYER AND METHOD FOR PREPARING THE SAME

摘要

The present invention relates to a high-efficiency silicon nanocrystal photodetector element using a multi-reflection film and a manufacturing method thereof. The photodetector element of the present invention comprises: a photoelectric conversion layer interposed between a lower and an upper carrier transport layer; a transparent conductive thin film disposed on the upper carrier transport layer; a multi-reflection layer formed on the transparent conductive thin film wherein the multi-reflection layer comprises a silicon nitride containing silicon nanocrystals and each of the layers has different refractive indexes and different nanocrystal sizes. The nanocrystal photodetector element having such a multi-reflection film is capable of enhancing a photoelectric conversion efficiency of a photodetector due to an increase of light absorption incident on the photoelectric conversion layer inside the photodetector.