| 摘要 |
A method for forming a thin film comprises (a) generating and electrostatically attracting electrons towards an electrode to form a beam, (b) activating reactive gases in a relatively low vacuum with the beam, (c) forming vapours including atomic clusters and non- clustered atomic particles to be deposited on a substrate, (d) partially ionising to form cluster ions and non-clustered ions, (e) simultaneously directing the activated reactive gas, ions, clusters and atomic particles toward the substrate, and (f) reacting theses species with the activated gas to deposit a thin film. The thin film of high quality can be efficiently deposited. |
