发明名称 SEMICONDUCTOR DEVICE, CONTROL IC FOR SWITCHING POWER SUPPLY, AND SWITCHING POWER SUPPLY UNIT
摘要 Aspects of the invention can include a semiconductor device, control IC for switching power supply and switching power supply unit, which allow input voltage detecting function to be realized without resistor-voltage dividing circuit. An npn-type element consisting of p-type region, collector region and emitter region is included inside of drain region of starting element. On a first interlayer insulating film, aspects of the invention can provide collector electrode wiring of npn-type element, emitter-drain electrode wiring serving as both emitter electrode wiring of npn-type electrode and drain electrode wiring of starting element, source electrode wiring of starting element, and gate electrode wiring of starting element. A first metal wiring can serve both as input terminal of starting element and input terminal of npn-type element is connected to collector electrode wiring. The npn-type element can function as input voltage detecting means for detecting input voltage drop applied to the first wiring.
申请公布号 US2015228641(A1) 申请公布日期 2015.08.13
申请号 US201514591362 申请日期 2015.01.07
申请人 FUJI ELECTRIC CO., LTD. 发明人 SAITO Masaru
分类号 H01L27/06;H01L29/735;H01L29/10;H01L29/78 主分类号 H01L27/06
代理机构 代理人
主权项 1. A semiconductor device comprising: a field effect transistor having a drift region of a second conductivity type formed in a surface layer of a semiconductor substrate of a first conductivity type, and a drain region of a second conductivity type formed in a surface layer of the semiconductor substrate in contact with the drift region; a semiconductor region of a first conductivity type selectively formed in a surface layer of the drain region; a first semiconductor region of a second conductivity type selectively formed in a surface layer of the semiconductor region of the first conductivity type; a second semiconductor region of a second conductivity type selectively formed in the surface layer of the semiconductor region of the first conductivity type, apart from the first semiconductor region of the second conductivity type; a first electric wiring connected to the first semiconductor region of the second conductivity type, and externally inputted with an input voltage; and a second electric wiring connected to the drain region and the second semiconductor region of the second conductivity type.
地址 Kawasaki-shi JP