| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a heat treatment method capable of decreasing a sheet resistance value by heating a substrate surface to higher temperature.SOLUTION: A pattern is formed on a Si substrate surface, and impurities (ions) such as boron, are implanted into the surface. A carbon thin film is formed on the Si substrate surface, then the Si substrate surface is irradiated with flash light emitted from a flash lamp in an oxygen atmosphere. A sheet resistance value is decreased by allowing the carbon thin film to absorb the flash light so that the same is heated and by heating at higher temperature a surface of the Si substrate into which the impurity is implanted in comparison with the case where the thin film is not formed. The carbon thin film is heated and oxidized to consume it in the oxygen atmosphere, thereby the carbon residual thin film can be removed by only general SPM cleaning and APM cleaning without a subsequent ashing treatment, and so on.</p> |
