SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress deterioration of the electric characteristics of a transistor having an oxide semiconductor layer or of a semiconductor device comprising the transistor.SOLUTION: A silicon layer 112 is provided in a transistor 120 using an oxide semiconductor 108 as a channel layer so as to be in contact with a surface of the oxide semiconductor layer. The silicon layer is provided so as to be in contact with at least a region of the oxide semiconductor layer in which a channel is formed. A source electrode layer 116a and a drain electrode layer 116b are provided in a region of the oxide semiconductor layer in which the silicon layer is not provided.