发明名称 シリアル不揮発性メモリに対する向上されたアドレス能力
摘要 <p>A method and a memory device are provided for accessing a storage location. The method includes storing an extended address value in a register in a non-volatile memory device. The method further includes subsequently receiving multiple addresses and combining the stored extended address value with each of the multiple received addresses to produce multiple combined addresses. The method further includes accessing multiple storage locations within the non-volatile memory device based, at least in part, on the multiple combined addresses.</p>
申请公布号 JP5832901(B2) 申请公布日期 2015.12.16
申请号 JP20110542905 申请日期 2008.12.30
申请人 マイクロン テクノロジー, インク. 发明人 カレ,プールナ;ビューブ,クリス;ゼリッリ,トマゾ;ブファノ,ラファエーレ;ロスパルッティ,サンドラ;ジビラロ,マルコ
分类号 G06F12/02;G06F12/00 主分类号 G06F12/02
代理机构 代理人
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