发明名称 |
Flexible semiconductor devices and methods of manufacturing the same |
摘要 |
<p>A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.</p> |
申请公布号 |
EP2704216(A3) |
申请公布日期 |
2015.12.16 |
申请号 |
EP20130180535 |
申请日期 |
2013.08.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
CHOI, JUN-HEE;CHOI, BYOUNG-LYONG;KIM, TAE-HO |
分类号 |
H01L33/24;H01L31/00;H01L33/56 |
主分类号 |
H01L33/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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