发明名称 Reference current generating circuit, reference voltage generating circuit, and temperature detection circuit
摘要 <p>A reference current generating circuit with high current mirror accuracy is provided by low power supply voltage operation. The reference current generating circuit includes a cascode current mirror circuit 1 outputting mirror currents I 1 and I2, and a reference current Iref, a current-voltage converter circuit 2 converting the mirror current I1 into a voltage V1, a current-voltage converter circuit 3 converting the mirror current I2 into a voltage V2, a differential amplifier 4 in which the voltage V1 is input to a first input terminal and the voltage V2 is input to a second input terminal, a voltage-current converter circuit 5 converting a voltage V3 output from the differential amplifier 4 into currents I3 and I4, and a current-voltage converter circuit 6 converting the current I3 into a voltage V4 which is output to a gate of a transistor in the cascode current mirror circuit.</p>
申请公布号 EP2434366(A3) 申请公布日期 2015.12.16
申请号 EP20110182079 申请日期 2011.09.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO, LTD. 发明人 WATANABE, KAZUNORI
分类号 G05F3/26 主分类号 G05F3/26
代理机构 代理人
主权项
地址
您可能感兴趣的专利