Non-volatile memory device with vertical memory cells and method for fabricating the same

摘要

A non-volatile memory device includes a plurality of gate electrodes stacked over a semiconductor substrate and stretched in a first direction along the semiconductor substrate and a plurality of junction layers having a first region protruding from the semiconductor substrate and crossing the gate electrodes and a second region formed between the gate electrodes.

主权项

1. A method for fabricating a non-volatile memory device, comprising:
forming a stack layer by alternately stacking a first conductive layer, a first insulation layer, and a second insulation layer over a semiconductor substrate; forming first openings and a plurality of gate electrodes that are isolated from each other by the first openings by etching the stack layer; forming a third insulation layer filling the first openings; forming second openings by selectively etching the third insulation layer; forming third openings by removing the second insulation layer that is exposed on sidewalls of the second openings; forming a charge trapping dielectric layer over the semiconductor substrate having the third openings formed therein; and forming a junction layer and a cell channel layer over the charge trapping dielectric layer to fill the second openings and the third openings, respectively.