发明名称 |
Method and apparatus for fabricating phosphor-coated LED dies |
摘要 |
A lighting apparatus includes a first doped semiconductor layer, a light-emitting layer disposed over the first doped semiconductor layer, a second doped semiconductor layer disposed over the light-emitting layer, a first conductive terminal, a second conductive terminal, and a photo-conversion layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. The first conductive terminal and the second conductive terminal each are disposed below the first doped semiconductor layer. The photo-conversion layer is disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer. A bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals. |
申请公布号 |
US9214610(B2) |
申请公布日期 |
2015.12.15 |
申请号 |
US201414305352 |
申请日期 |
2014.06.16 |
申请人 |
TSMC SOLID STATE LIGHTING LTD. |
发明人 |
Tseng Chi-Xiang;Lee Hsiao-Wen;Wu Min-Sheng;Lin Tien-Min |
分类号 |
H01L33/50;H01L27/15;H01L33/46;H01L33/54 |
主分类号 |
H01L33/50 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. A lighting apparatus, comprising:
a first doped semiconductor layer; a light-emitting layer disposed over the first doped semiconductor layer; a second doped semiconductor layer disposed over the light-emitting layer, the second doped semiconductor layer having a different type of conductivity than the first doped semiconductor layer; a first conductive terminal and a second conductive terminal each disposed below the first doped semiconductor layer; and a photo-conversion layer disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer, wherein a bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals. |
地址 |
Hsinchu TW |