发明名称 Method and apparatus for fabricating phosphor-coated LED dies
摘要 A lighting apparatus includes a first doped semiconductor layer, a light-emitting layer disposed over the first doped semiconductor layer, a second doped semiconductor layer disposed over the light-emitting layer, a first conductive terminal, a second conductive terminal, and a photo-conversion layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. The first conductive terminal and the second conductive terminal each are disposed below the first doped semiconductor layer. The photo-conversion layer is disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer. A bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals.
申请公布号 US9214610(B2) 申请公布日期 2015.12.15
申请号 US201414305352 申请日期 2014.06.16
申请人 TSMC SOLID STATE LIGHTING LTD. 发明人 Tseng Chi-Xiang;Lee Hsiao-Wen;Wu Min-Sheng;Lin Tien-Min
分类号 H01L33/50;H01L27/15;H01L33/46;H01L33/54 主分类号 H01L33/50
代理机构 Muncy, Geissler, Olds & Lowe, P.C. 代理人 Muncy, Geissler, Olds & Lowe, P.C.
主权项 1. A lighting apparatus, comprising: a first doped semiconductor layer; a light-emitting layer disposed over the first doped semiconductor layer; a second doped semiconductor layer disposed over the light-emitting layer, the second doped semiconductor layer having a different type of conductivity than the first doped semiconductor layer; a first conductive terminal and a second conductive terminal each disposed below the first doped semiconductor layer; and a photo-conversion layer disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer, wherein a bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals.
地址 Hsinchu TW