| 摘要 |
The present invention aims to provide a wafer machining method which attaches a protective tape on a surface of a wafer with a modified layer along a line planned to be divided, grinds the back surface of the wafer supplying grinding fluid, forms into a certain thickness, and can divide the wafer into individual devices without polluting the side surface and the surface of the device. According to the present invention, the wafer machining method is a wafer machining method which divides a wafer, which has multiple lines planned to be divided in the shape of a grid on the surface and a device formed in multiple areas classified by the multiple lines planned to be divided, into individual devices along the lines planned to be divided, and comprises: a process for forming a modified layer to irradiate a laser beam with a wavelength having a penetrability to the wafer along the lines planned to be divided by placing a light converging point inside and to form a modified layer along the lines planned to be divided in the wafer; a process for grinding the back surface to grind the back surface of the wafer supplying grinding fluid, to form into a certain thickness, and to divide the wafer into individual devices along the lines planned to be divided with the modified layer as the starting point of fracture; a process for forming a protective film to cover the surface of the wafer with liquid resin before conducting the process for grinding the back surface and to form the protective film; and, a process for attaching a protective tape to the surface of the protective film. |
