Transparent conducting oxide for photovoltaic devices

摘要

One embodiment of the present invention provides a solar cell. The solar cell includes a Si base layer, a passivation layer situated above the Si base layer, a layer of heavily doped amorphous Si (a-Si) situated above the passivation layer, a first transparent-conducting-oxide (TCO) layer situated above the heavily doped a-Si layer, a back-side electrode situated below the Si base layer, and a front-side electrode situated above the first TCO layer. The first TCO layer comprises at least one of: GaInO, GaInSnO, ZnInO, and ZnInSnO.

主权项

1. A solar cell, comprising:
a Si base layer; a passivation layer positioned on a first side of the Si base layer; a p type doped amorphous semiconductor layer positioned on the passivation layer; a first transparent-conducting-oxide layer positioned on and in direct contact with the p-type doped amorphous semiconductor layer, wherein the first transparent-conducting-oxide layer has a work function that is between 4.9 eV and 6.1 eV, and wherein the first transparent-conducting-oxide layer comprises at least one of: GaInO, GaInSnO, and ZnInO; a second transparent-conducting-oxide layer comprising indium-tin-oxide positioned on and in direct contact with the first transparent-conducting-oxide layer; and a first metal grid positioned on a first side of the second transparent-conducting-oxide layer.