Producing method of encapsulating layer-covered semiconductor element and producing method of semiconductor device

摘要

A method for producing an encapsulating layer-covered semiconductor element includes a disposing step of disposing a semiconductor element on a support, an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and a heating step of heating and curing the encapsulating layer after the encapsulating step. The heating step includes a first heating step in which the encapsulating sheet is heated at a first temperature, while being mechanically pressurized toward the support and a second heating step in which the encapsulating sheet is heated at a second temperature that is higher than the first temperature after the first heating step.

主权项

1. A method for producing an encapsulating layer-covered semiconductor element comprising:
a disposing step of disposing a semiconductor element on a support, an encapsulating step of embedding and encapsulating the semiconductor element by an encapsulating layer in an encapsulating sheet including a peeling layer and the encapsulating layer laminated below the peeling layer and made from a thermosetting resin before complete curing, and a heating step of heating and curing the encapsulating layer after the encapsulating step, wherein the heating step includes a first heating step in which the encapsulating sheet is heated at a first temperature, while being mechanically pressurized toward the support and a second heating step in which the encapsulating sheet is heated at a second temperature that is higher than the first temperature after the first heating step.