| 发明名称 | Compound semiconductor devices and methods for fabricating the same | ||
| 摘要 | According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer. | ||
| 申请公布号 | US9214596(B2) | 申请公布日期 | 2015.12.15 |
| 申请号 | US201113880708 | 申请日期 | 2011.10.26 |
| 申请人 | LG Siltron Inc.;Kumoh National Institute of Technology Industry-Academic Cooperation Foundation | 发明人 | An Sung-Jin;Lee Dong-Gun;Kim Seok-Han |
| 分类号 | H01L33/02;H01L21/02;H01L33/00;H01L33/12;H01L21/36;H01L29/06;B82Y40/00 | 主分类号 | H01L33/02 |
| 代理机构 | Lewis Roca Rothgerber LLP | 代理人 | Lewis Roca Rothgerber LLP |
| 主权项 | 1. A method for manufacturing a compound semiconductor, the method comprising: forming a graphene-derived material layer on one of a first substrate and a first compound semiconductor layer; forming at least one layer of second compound semiconductor layers on the graphene-derived material layer; and transforming the graphene-derived material layer into a graphene oxide layer to separate at least one layer of the second compound semiconductor layers from the first compound semiconductor layer. | ||
| 地址 | KR | ||