| 发明名称 | Laser via drilling apparatus and methods | ||
| 摘要 | A method includes generating a laser beam and applying the beam to a substrate to form a via in the substrate. The laser beam has an intensity profile taken at a cross-section transverse to the direction of propagation of the beam. The intensity profile has a first substantially uniform level across an interior region of the cross-section and a second substantially uniform level across an exterior region of the cross-section. The second intensity level is greater than the first intensity level. | ||
| 申请公布号 | US9211609(B2) | 申请公布日期 | 2015.12.15 |
| 申请号 | US200511319824 | 申请日期 | 2005.12.28 |
| 申请人 | Intel Corporation | 发明人 | Salama Islam A.;Quick Nathaniel R.;Kar Aravinda |
| 分类号 | B23K26/00;B23K26/38;B23K26/073;H01L21/311;H05K3/00;B23K26/40 | 主分类号 | B23K26/00 |
| 代理机构 | Buckley, Maschoff & Talwalkar LLC | 代理人 | Buckley, Maschoff & Talwalkar LLC |
| 主权项 | 1. A method comprising: generating a laser beam; shaping the laser beam with an optical element such that the laser beam has an intensity profile taken at a cross-section transverse to a direction of propagation of the beam, the intensity profile having a first substantially uniform level across an interior region of said cross-section, and having a second substantially uniform level across an exterior region of said cross-section, said second level greater than said first level; and applying the shaped laser beam to a substrate to form a via in the substrate. | ||
| 地址 | Santa Clara CA US | ||