| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable to use a semiconductor light source capable of rapidly modulating in several GHz to several tens GHz (millimeter wave band). SOLUTION: In a semiconductor light emitting element capable of rapidly modulating, a first quantum well layer 4 having an InGaAsP well layer 2 to be a light emitting element and an InGaAsP barrier layer 3 having a wider forbidden band width than that of the layer 2, and a second quantum well layer 8 in which two InGaAs well layers 5 and a thin distortion AlAs intermediate barrier layer 6 formed between the two layers 5 are interposed between AlAsSb barrier layers 7, are alternatively laminated to constitute a light emitting region 1. An n-type InGaAsP light guide layer 9 is laminated on a lower part of the region 1, and a p-type InGaAsP light guide layer 10 is laminated on an upper part of the region 1. The layer 8 has different inter-subband absorption wavelength from the light emitting wavelength in the layer 4, and the emitting light is modulated by injecting a modulation signal in the inter-subband absorption wavelength band.</p> |
