| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology capable of stabilizing a threshold voltage.SOLUTION: A semiconductor device 1 comprises: a first trench 611 on a surface of a semiconductor substrate 10; a second trench 612 which extends, in a planar view of the surface, in a direction different from the direction of the first trench 611 and intersects with the first trench; a gate insulating film which covers the inner surfaces of both trenches and the inner surface of an intersection 30; a gate electrode which is formed in both trench and faces the semiconductor substrate 10 via the gate insulation film; an n-type emitter region 24 which is exposed on a surface of the semiconductor substrate 10 and is in contact with the gate insulating film in the first trench 611 but not in contact with the gate insulating film in an inner surface 301 of the intersection 30; a p-type body region which is in contact with the gate insulating film in the first trench 611 on the side deeper than the emitter region 24; and an n-type drift region which is in contact with the gate insulating film in the first trench 611 on the side deeper than the body region and is separated from the emitter region 24 by the body region. |
