| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of preventing increase of surge voltage and inductance.SOLUTION: The semiconductor device (power semiconductor device 11) includes: a first substrate (a positive electrode side lead frame 1) connected to a positive electrode terminal; a second substrate (an output side lead frame 2) connected to an output terminal; a third substrate (a negative side lead frame 3) connected to a negative electrode terminal; a positive electrode side semiconductor element (a positive electrode side switching element 4, a positive electrode side rectifier element 5) with one plane connected to the first substrate and the other plane connected to the second substrate; and a negative electrode side semiconductor device (a negative electrode side switching element 6, a negative electrode side rectifier element 7) with one plane connected to the second substrate and the other plane connected to the third substrate bridging the first substrate. |
