| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which inhibits generation of a void.SOLUTION: A semiconductor device manufacturing method comprises the steps of: preparing a semiconductor substrate including a semiconductor chip region and a scribe region; forming an adhesive layer at least on one surface of the semiconductor substrate and at least on the semiconductor chip region; singulating the semiconductor substrate along the scribe region to form at least one first semiconductor chip; preparing a first element; and bonding the first semiconductor chip and the first element via the adhesive layer. In the step of forming the adhesive layer, the adhesive layer is formed in a manner such that a thickness of a part of the adhesive layer on the semiconductor chip region, which extends along an outer edge of the semiconductor chip region is thinner than that of other parts or zero. In the step of bonding the first semiconductor chip and the first element, the adhesive layer is expanded at least to an end of the first semiconductor chip so as to fill a gap between the first semiconductor chip and the first element. |
