发明名称 PHASE SHIFT MASK BLANK, PRODUCTION METHOD THEREOF AND PRODUCTION METHOD OF PHASE SHIFT MASK
摘要 PROBLEM TO BE SOLVED: To provide a phase shift mask blank and its production method which enable patterning, by wet etching, of a phase shift film to a cross sectional shape capable of exerting a phase shift effect sufficiently and a production method of a phase shift mask having a phase shift film pattern capable of exerting a phase shift effect sufficiently.SOLUTION: A phase shift mask blank 1 consists of a phase shift film 3 formed on a transparent substrate 2 and containing chromium, oxygen and nitrogen. The phase shift film 3 has a main layer 3a and an outermost surface layer 3b composed of the same material. The refractive index of the upper part of the main layer on the side of the outermost surface layer 3b at the wavelength of 365 nm is smaller than the refractive index of the lower part of the main layer on the side of the transparent substrate 2 at the wavelength of 365 nm.
申请公布号 JP2015225280(A) 申请公布日期 2015.12.14
申请号 JP20140110982 申请日期 2014.05.29
申请人 HOYA CORP 发明人 TSUBOI SEIJI;SAKAYA NORIYUKI
分类号 G03F1/32;C23C14/06;C23C14/34 主分类号 G03F1/32
代理机构 代理人
主权项
地址
您可能感兴趣的专利