MULTISTAGE MEMORY CELL READ

摘要

A multistage read can dynamically change word line capacitance as a function of threshold voltage of a memory cell being read. The multistage read can reduce current spikes and reduce the heating up of a memory cell during a read. A memory device includes a global word line driver to connect a word line of a selected memory cell to the sensing circuit, and a local word line driver local to the memory cell. After the word line is charged with read voltage, control logic can selectively enable and disable a portion or all of the global word line driver and the local word line driver in conjunction with applying different discrete voltage levels to the bit line to perform a multistage read.