| 摘要 |
Provided is a quaternary ammonium salt compound which suppresses reflection in a KrF exposure process than a case of using the conventional silicon-containing resist underlayer film by being added to a composition for forming a resist underlayer film so as to improve the form of patterns. The quaternary ammonium salt compound represented by the following formula (A-1). (In the formula, R^1, R^2, and R^3 represent an alkyl group, an alkenyl group, an aryl group, or an aralkyl group, and partial or all hydrogen atoms may be substituted by a hydroxyl group, an alkoxy group, or halogen atoms and have one or more among a carbonyl group and an ester bond. R^4 represents a single bond, an alkylene group, an alkenylene group, an arylene group, or an aralkylene group, and partial or all hydrogen atoms may be substituted by an alkoxy group, or halogen atoms and have one or more among an ether bond, a carbonyl group, an ester bond, and an amide bond. A^- is a non-nucleophilic counterion.) |
