| 摘要 |
The invention relates to a silicon-based composite substrate (1) having, in a vertical section plane, active zones (10) of p-doped and/or n-doped silicon, each of the active zones extending through the entire thickness (e) of the substrate, two active zones being separated from one another by at least one electrical insulation zone (20) formed by a silicon carbide strip (21) brazed between two silicon carbide layers (22) adjacent to the active zones, using brazing joints (23). The invention also relates to a method for producing such a composite substrate. |
