| 摘要 |
Disclosed are a light emitting diode and a method for manufacturing the same. The light emitting diode includes: a light emitting structure; a plurality of holes which penetrate a second conductive semiconductor layer and an active layer, and exposes a portion of a first conductive semiconductor layer; and a first electrode layer and a second electrode layer which are electrically connected to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, and are insulated from each other. The second electrode layer includes a plurality of unit electrode layers having an aperture corresponding to each hole, and separated from each other; and at least one connection layer which electrically connects at least two unit electrode layers. The first electrode layer comes in ohmic contact with the first conductive semiconductor layer through the holes, and overlaps a portion of the light emitting structure. Accordingly, provided is the light emitting diode with enhanced current distribution efficiency and light emitting uniformity. |
