发明名称 INTEGRATED CIRCUITS WITH HALL EFFECT SENSORS AND METHODS FOR PRODUCING SUCH INTEGRATED CIRCUITS
摘要 Integrated circuits with a Hall effect sensor and methods for fabricating such integrated circuits are provided. The method includes forming a buried plate layer within a substrate and overlying a substrate base, where the buried plate layer is doped with an “N” type dopant. A cover insulating layer if formed overlying the buried plate layer, and a plurality of contact points are formed adjacent to the cover insulating layer.
申请公布号 US2015357561(A1) 申请公布日期 2015.12.10
申请号 US201414295547 申请日期 2014.06.04
申请人 GLOBALFOUNDRIES Singapore Pte. Ltd. 发明人 Toh Eng Huat;Liu Xinfu
分类号 H01L43/14;H01L43/04;H01L43/06 主分类号 H01L43/14
代理机构 代理人
主权项 1. A method of producing an integrated circuit comprising: forming a buried plate layer within a substrate and overlying a substrate base, wherein the buried plate layer is doped with an “N” type dopant; forming a cover insulating layer overlying the buried plate layer; and forming a plurality of contact points in the substrate, wherein the plurality of contact points are adjacent to the cover insulating layer.
地址 Singapore SG