发明名称 |
INTEGRATED CIRCUITS WITH HALL EFFECT SENSORS AND METHODS FOR PRODUCING SUCH INTEGRATED CIRCUITS |
摘要 |
Integrated circuits with a Hall effect sensor and methods for fabricating such integrated circuits are provided. The method includes forming a buried plate layer within a substrate and overlying a substrate base, where the buried plate layer is doped with an “N” type dopant. A cover insulating layer if formed overlying the buried plate layer, and a plurality of contact points are formed adjacent to the cover insulating layer. |
申请公布号 |
US2015357561(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201414295547 |
申请日期 |
2014.06.04 |
申请人 |
GLOBALFOUNDRIES Singapore Pte. Ltd. |
发明人 |
Toh Eng Huat;Liu Xinfu |
分类号 |
H01L43/14;H01L43/04;H01L43/06 |
主分类号 |
H01L43/14 |
代理机构 |
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代理人 |
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主权项 |
1. A method of producing an integrated circuit comprising:
forming a buried plate layer within a substrate and overlying a substrate base, wherein the buried plate layer is doped with an “N” type dopant; forming a cover insulating layer overlying the buried plate layer; and forming a plurality of contact points in the substrate, wherein the plurality of contact points are adjacent to the cover insulating layer. |
地址 |
Singapore SG |