METAL OXIDE THIN FILM TRANSISTOR

摘要

A metal oxide thin film transistor (TFT) includes a gate electrode, a gate insulating layer, a metal oxide active layer, a source electrode, and a drain electrode. The gate electrode is formed on a substrate. The gate insulating layer is formed on the substrate and covers the gate electrode. The metal oxide active layer is formed on the gate insulating layer. The drain electrode and the source electrode are formed on two opposite ends of the metal oxide active layer in a spaced-apart manner, in which at least one of the orthographic projection of the source electrode and the orthographic projection of the drain electrode on the substrate does not overlap the gate electrode.

主权项

1. A metal oxide thin film transistor (TFT) comprising:
a gate electrode formed on a substrate; a gate insulating layer formed on the substrate and covering the gate electrode; a metal oxide active layer formed on the gate insulating layer; and a source electrode and a drain electrode formed on two opposite ends of the metal oxide active layer in a spaced-apart manner and defining a gap, wherein at least one of an orthographic projection of the source electrode and an orthographic projection of the drain electrode on the substrate does not overlap the gate electrode, wherein the metal oxide active layer has a top surface, the top surface is located on the gap between the source electrode and the drain electrode, the top surface and the source electrode cross at a first boundary, the top surface and the drain electrode cross at a second boundary, the top surface has a gate-overlaying zone, an orthographic projection of the gate-overlaying zone on the substrate overlaps the gate electrode, wherein the first boundary, the second boundary and the gate-overlaying zone are coplanar.