发明名称 Atomic Layer Deposition (ALD) of TiO2 using (Tetrakis(dimethylamino)titanium) TDMAT as an Encapsulation and/or Barrier Layer for ALD PbS
摘要 A method of encapsulating PbS quantum dots is provided that includes depositing, using atomic layer deposition (ALD), a first layer of TiO2 on a substrate, depositing, using ALD, a first layer of PbS quantum dots on the first layer of TiO2, and depositing, using ALD, an encapsulating layer of the TiO2 on the first layer of TiO2 and the first layer of PbS quantum dots, where the first layer of PbS quantum dots are encapsulated and separated by the first layer of TiO2 and the encapsulating layer of TiO2.
申请公布号 US2015357534(A1) 申请公布日期 2015.12.10
申请号 US201414299471 申请日期 2014.06.09
申请人 The Board of Trustees of the Leland Stanford Junior University ;Honda Patents & Technologies North America, LLC 发明人 Dasgupta Neil;Iancu Andrei T.;Iwadate Hitoshi;Langston Michael C.;Logar Manca;Prinz Friedrich B.;Trejo Orlando;Xu Shicheng
分类号 H01L33/52 主分类号 H01L33/52
代理机构 代理人
主权项 1. A method of encapsulating a size gradient of PbS quantum dots in a solar cell, comprising: a. depositing, using atomic layer deposition (ALD), a first layer of TiO2 on a substrate; b. depositing, using said ALD, a first layer of PbS quantum dots on said first layer of TiO2; c. depositing, using said ALD, a first encapsulating layer of said TiO2 on said first layer of TiO2 and said first layer of PbS quantum dots, wherein said first layer of PbS quantum dots are encapsulated and separated by said first layer of TiO2 and said first encapsulating layer of TiO2; d. depositing, using said ALD, subsequent layer of said PbS quantum dots on said first encapsulating layer, wherein said subsequent layer of said PbS quantum dots is smaller than said first layer of said PbS quantum dots, wherein a size of said PbS quantum dots is controlled according to a number of ALD cycles during said PbS quantum dot deposition; e. depositing, using said ALD, a subsequent encapsulating layer of said TiO2, wherein a vertical separation of said PbS quantum dots is controlled according to a thickness of each said encapsulating layer of said TiO2, wherein each said subsequent layer of said PbS quantum dots is smaller than a previous said subsequent layer of said PbS quantum dots, wherein each said subsequent layer of said PbS quantum dots is encapsulated by another said subsequent layer of said TiO2, wherein an encapsulated size gradient of said PbS quantum dots is formed; f. depositing, using lithography, a top electrode; and g. depositing, using lithography, a bottom electrode, wherein a size gradient PbS QD solar cell is formed.
地址 Palo Alto CA US