BACKSIDE SOURCE-DRAIN CONTACT FOR INTEGRATED CIRCUIT TRANSISTOR DEVICES AND METHOD OF MAKING SAME

摘要

An integrated circuit transistor is formed on and in a substrate. A trench in the substrate is at least partially filed with a metal material to form a source (or drain) contact buried in the substrate. The substrate further includes a source (or drain) region epitaxially grown above the source (or drain) contact. The substrate further includes a channel region adjacent to the source (or drain) region. A gate dielectric is provided on top of the channel region and a gate electrode is provided on top of the gate dielectric. The substrate is preferably of the silicon on insulator (SOI) type.

主权项

1. An integrated circuit transistor, comprising:
a substrate including an insulating layer and an overlying semiconductor layer, the substrate including a trench extending into the insulating layer; a metal material at least partially filling the trench in the insulating layer to form a source contact buried in the substrate, said source contact having a top surface; a source region formed by the overlying semiconductor layer and in electrical contact with the source contact, said source region having a bottom surface in physical contact with the top surface of the source contact; a channel region in the overlying semiconductor layer adjacent the source region; a gate dielectric on top of the channel region; and a gate electrode on top of the gate dielectric.