| 发明名称 |
HIGH-PURITY COPPER-COBALT ALLOY SPUTTERING TARGET |
| 摘要 |
A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at % of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 μm or less, and a number of precipitates is 500 precipitates/mm2 or less. It is thereby possible to provide a high purity copper-cobalt alloy sputtering target capable of inhibiting the generation of particles during sputtering, and in particular improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration. |
| 申请公布号 |
US2015354047(A1) |
申请公布日期 |
2015.12.10 |
| 申请号 |
US201414759424 |
申请日期 |
2014.02.19 |
| 申请人 |
JX NIPPON MINING & METALS CORPORATION |
发明人 |
Nagata Kenichi;Otsuki Tomio |
| 分类号 |
C22F1/08;H01J37/34;C22C9/06;C23C14/34 |
主分类号 |
C22F1/08 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at % of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 μm or less, and a number of precipitates is 500 precipitates/mm2 or less. |
| 地址 |
Chiyoda-ku, Tokyo JP |
