| 摘要 |
This SiC epitaxial wafer (1) is provided with a substrate (2) and an SiC epitaxial growth layer (3) that is arranged on the substrate (2). The SiC epitaxial growth layer (3) uses an Si compound as an Si supply source and a C compound as a C supply source, and the Si compound and/or the C compound uses a compound containing fluorine (F) as a supply source thereof. In this connection, the Si compound is generally represented by SinHxClyFz (wherein n ≥ 1, x ≥ 0, y ≥ 0, z ≥ 1, and x + y + z = 2n + 2) and the C compound is represented by CmHqClrFs (wherein m ≥ 1, q ≥ 0, r ≥ 0, s ≥ 1 and q + r + s = 2m + 2). Provided are: a high quality SiC epitaxial wafer which has excellent film thickness uniformity and carrier concentration uniformity, while having less surface defects; an apparatus for producing an SiC epitaxial wafer; a method for producing an SiC epitaxial wafer; and a semiconductor device. |
