| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can decrease a forward voltage of a Schottky barrier diode while ensuring breakdown voltage of a transistor in a composition where the transistor and the Schottky barrier diode are formed in one chip; and provide a semiconductor package in which the semiconductor device is covered with a resin package.SOLUTION: A semiconductor device 1 includes a semiconductor layer 22, a transistor region D formed in the semiconductor layer 22 to compose a transistor 11; and a diode region C formed in the semiconductor layer 22 to compose a Schottky barrier diode 10. Since a recess 35 is formed on the semiconductor layer 22 in the diode region C, the semiconductor layer 22 in the diode region C is thinner than the semiconductor layer 22 in the transistor region D. In the transistor 11, a depth of a second trench 13 which pierces an insulation layer 26 and a source region 32 to reach a channel region X is equivalent with a depth of the recess 35. |
