Random Number Generation with Ferroelectric Random Access Memory

摘要

A system on chip (SoC) may include a nonvolatile ferroelectric random access memory (FRAM). A random number may be created by applying operating power to the ferroelectric random access memory (FRAM) device and reading a sequence of virgin memory locations within the FRAM device to produce the random number sequence. The sequence of virgin memory locations had previously never been written. The random number may be produced during an initial boot of the SoC, for example. Alternatively, the random number may be saved by a test station during testing of the FRAM device after fabrication of the FRAM device. A memory test of the FRAM may then be performed, after which the random number may be stored in a defined location in the FRAM.

主权项

1. A method for creating a random number, the method comprising:
applying operating power to a ferroelectric random access memory (FRAM) array; and reading a sequence of virgin memory locations within the FRAM array to produce the random number sequence, wherein the sequence of virgin memory locations had previously never been written.