ACTIVE LAYER OF THIN FILM TRANSISTOR CRYSTALLIZING APPARATUS AND THE CRYSTALLIZING METHOD USING THE SAME

摘要

According to an embodiment of the present invention, disclosed is an active layer of a thin film transistor crystallizing apparatus which includes: a first laser for irradiating a first beam to crystallize an active layer, and a second laser for irradiating a second beam to heat the active layer, and has an asymmetric shape of a profile of the second beam.