发明名称 MULTIPLE PATTERN MASK OF ION IMPLANTATION AND METHOD OF ION IMPLANTATION USING THE SAME
摘要 The present invention relates to a multi-pattern mask for ion implantation, prepared on a substrate and controlling ion penetration into the substrate. The multi-pattern mask includes: a base part preventing the ion; and a pattern part exposing at least a part of the substrate so as to allow the ion to penetrate the substrate. Two or more pattern parts are prepared in different sizes or shapes.
申请公布号 KR20150138687(A) 申请公布日期 2015.12.10
申请号 KR20140066960 申请日期 2014.06.02
申请人 INTELLECTUAL KEYSTONE TECHNOLOGY LLC 发明人 PARK, SANG JIN;SEO, KYOUNG JIN;PARK, YOUNG SANG;HONG, JUN KI;LIM, HEUNG KYOON;LEE, DOO YOUL;PARK, SUNG CHAN
分类号 H01L31/068;H01L21/027;H01L21/265;H01L31/04 主分类号 H01L31/068
代理机构 代理人
主权项
地址