发明名称 CAPACITORS INCLUDING AMORPHOUS DIELECTRIC LAYERS AND METHODS OF FORMING THE SAME
摘要 A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.
申请公布号 US2015357399(A1) 申请公布日期 2015.12.10
申请号 US201514688564 申请日期 2015.04.16
申请人 Samsung Electronics Co., Ltd. ;NaMLab gGmbH 发明人 Cho Kyu-Ho;Kim Youn-Soo;Lim Han-Jin;Knebel Steve;Schroeder Uwe
分类号 H01L49/02;H01L21/02 主分类号 H01L49/02
代理机构 代理人
主权项 1. A capacitor, comprising: a lower electrode on a substrate; a dielectric layer structure, including: a first dielectric layer on the lower electrode, the first dielectric layer including a first crystalline metal oxide; anda second dielectric layer on the first dielectric layer, the second dielectric layer including an amorphous metal oxide having a dielectric constant less than that of the first dielectric layer and greater than that of aluminum oxide; and an upper electrode on the dielectric layer structure.
地址 Suwon-si KR