发明名称 |
CAPACITORS INCLUDING AMORPHOUS DIELECTRIC LAYERS AND METHODS OF FORMING THE SAME |
摘要 |
A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide. |
申请公布号 |
US2015357399(A1) |
申请公布日期 |
2015.12.10 |
申请号 |
US201514688564 |
申请日期 |
2015.04.16 |
申请人 |
Samsung Electronics Co., Ltd. ;NaMLab gGmbH |
发明人 |
Cho Kyu-Ho;Kim Youn-Soo;Lim Han-Jin;Knebel Steve;Schroeder Uwe |
分类号 |
H01L49/02;H01L21/02 |
主分类号 |
H01L49/02 |
代理机构 |
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代理人 |
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主权项 |
1. A capacitor, comprising:
a lower electrode on a substrate; a dielectric layer structure, including:
a first dielectric layer on the lower electrode, the first dielectric layer including a first crystalline metal oxide; anda second dielectric layer on the first dielectric layer, the second dielectric layer including an amorphous metal oxide having a dielectric constant less than that of the first dielectric layer and greater than that of aluminum oxide; and an upper electrode on the dielectric layer structure. |
地址 |
Suwon-si KR |