发明名称 UPPER RING OF PLASMA ETCHING EQUIPMENT
摘要 An upper ring of plasma etching equipment is provided to minimize generation of arching and damage due to a plasma etching through an etch stop layer by using rounded corners of a body. An upper ring(100) of plasma etching equipment includes a ring-shaped body(110), a plurality holes(130,140), and a pressure reading hole(120). The ring-shaped body is made of silicon carbide(SiC). The holes pass through the body in a vertical direction. The pressure reading hole passes through an inner diameter surface and an upper surface of the body. Corners of a lower inner diameter and an outer diameter of the body are rounded to minimize generation of arching. An etch stop layer made of a ceramic material is coated on the inner and outer diameter surfaces and a lower surface of the body.
申请公布号 KR20070028098(A) 申请公布日期 2007.03.12
申请号 KR20050083284 申请日期 2005.09.07
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHOI, MIN KYU
分类号 H01L21/3065 主分类号 H01L21/3065
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