QUANTUM CASCADE SEMICONDUCTOR LASER AND METHOD FOR FABRICATING QUANTUM CASCADE SEMICONDUCTOR LASER

摘要

PROBLEM TO BE SOLVED: To provide a quantum cascade semiconductor laser having a structure that can reduce power consumption and allows easy implementation.SOLUTION: In a quantum cascade semiconductor laser 11, a conductor 17 extends from an upper face 15g of a semiconductor laminate 15 to a first end face 15a of the semiconductor laminate 15, and thereby, a metal layer 25 is disposed on the first end face 15a of the semiconductor laminate 15. A reflectance or transmittance depending on the metal layer 25 is provided on the first end face 15a that constitutes an optical resonator of the quantum cascade semiconductor laser 11. Since the first end face 15a of the semiconductor laminate 15 is located on a boundary between a first region 13a and a second region 13b of a substrate 13 and receding from an end face of the substrate 13, a conductive adhesive material for implementation is prevented from coming into contact with the metal layer 25 on the first end face 15a of the semiconductor laminate 15 upon implementing the quantum cascade semiconductor laser 11.