发明名称 GATE DRIVING CIRCUIT
摘要 A temperature detection circuit for detecting a temperature of a switching element, a current source for causing a forward current to flow to the temperature detection circuit, an amplifier circuit for amplifying a forward voltage of the temperature detection circuit, a current adjustment circuit for adjusting a magnitude of a gate current to the switching element on the basis of an output voltage of the amplifier circuit, and a drive circuit for receiving an external signal and turning ON/OFF the switching element, are included. The magnitude of the gate current caused to flow from the current adjustment circuit to the gate electrode of the switching element is adjusted on the basis of a change in a magnitude of the forward voltage corresponding to a change in the temperature of the temperature detection circuit.
申请公布号 US2015358013(A1) 申请公布日期 2015.12.10
申请号 US201414760928 申请日期 2014.01.29
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 SAKAI Takuya;NAKATAKE Hiroshi
分类号 H03K17/14;H03K17/16 主分类号 H03K17/14
代理机构 代理人
主权项 1. A gate driving circuit for driving a power conversion switching element by charging and discharging a gate electrode of the switching element, the gate driving circuit comprising: a temperature detection circuit for detecting a temperature of the switching element; a current source for causing a forward current to flow to the temperature detection circuit; an amplifier circuit for amplifying a forward voltage of the temperature detection circuit and adjusting the amplified voltage in accordance with an offset voltage; a current adjustment circuit for adjusting a magnitude of a gate current caused to flow to a gate electrode of the switching element, on the basis of an output voltage of the amplifier circuit; and a drive circuit for receiving an external signal and turning ON/OFF the switching element, wherein the magnitude of the gate current caused to flow from the current adjustment circuit to the gate electrode of the switching element is adjusted on the basis of a change in a magnitude of the forward voltage corresponding to a change in the temperature of the temperature detection circuit.
地址 Chiyoda-ku, Tokyo JP